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Фотографии с IC MNE 2005 и QI 2005
Уважаемые участники конференции!
Напоминаем, что ICMNE-2005 - конференция SPIE. Официальный язык конференции английский.
Устные доклады (включая иллюстративные материалы) и постеры должны быть сделаны на английском.
ICMNE-2005 AND SYMPOSIUM QI-2005 SCIENTIFIC PROGRAM
(Final Edition)
(Oral Presentations)
Download files:
ICMNE-2005 Oral Presentations
ICMNE-2005 Posters
QI-2005 Oral Presentations
Monday, October 3th , 2005 |
| 9.00 - … |
Registration & Accommodation |
13.00 - 14.00 |
Lunch |
Conference hall
Special Session |
15.30 |
S-01 |
FEI Company Instruments and Technologies for Analysis and Modification of Micro- and Nanoelectronic Devices. V. Ya. Shklover. Systems for Microscopy and Analysis, Ltd. Moscow , Russia |
16.00 |
S-02 |
CARL ZEISS Equipment for micro- & nano- electronics and E-beam Lithography. Alexander Uliyanenkov. Department of CARL ZEISS on SMT in Russia , NIS , and Eastern Europe. |
16.30 |
S-03 |
New Developments in NT-MDT Microscope Line. V.A. Bykov. NT-MDT Co., Moscow , Zelenograd , Russia. |
17.00 |
S-04 |
Development of Components for New Generation of Radio-Electronic Modules and Subsystems. A.G. Vasiliev. Federal State Unitary Enterprise SPE "Pulsar". |
17.30 |
S-05 |
Application of Base Gate Arrays at Development of Equipment. A.N. Saurov, A.N. Denisov, V.V. Konyachin. State Manufacturing Complex “Technological Centre” MIET, Moscow , Russia. |
18.00 |
Welcome Party |
19.00 |
Dinner |
|
Tuesday, October 4th , 2005 |
| Conference hall |
8.00 |
Breakfast |
8.40 |
Welcome remarks
E.P. Velikhov, Conference Chair, RSC “Kurchatov Institute”, Moscow
K.A. Valiev, Program Chair, IPT RAS, Moscow
|
| Plenary Session |
8.50 |
L1-1 |
INVITED: Materials Inflation for Nano Devices. H. Ryssel. Fraunhofer Institute of Integrated Systems and Device Technology (IISB), Erlangen , Germany |
9.30 |
L1-2 |
INVITED: Advanced silicon-based micro- and nanoelectronics: physics and technology. A.L.Aseev and I.G.Neizvestny. Institute of Semiconductor Physics SD RAS, Novosibirsk , Russia |
10.10 |
L1-2D |
Ultra Shallow Junction formation by Plasma Doping Technologies. Hiroyuki Ito. UJT Lab. Inc. , Osaka, Japan. |
10.40 |
L1-3 |
INVITED:Quantum description of nanotransistors. Vladimir F. Lukichev. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia |
11.10 |
L1-4 |
INVITED:Microelectronics Below 10 nm: Prospects and Problems. Konstantin K. Likharev. Stony Brook University, Stony Brook , NY 11794-3800 , U.S.A |
11.40 - 12.00 |
Coffee break. Winter garden |
Conference Hall Session 1. Sub-100 nm Lithography |
12.00 |
O1-01 |
Research activity in the field of projection EUV-Lithography within the framework of the Russian program. S.V. Gaponov, E.B. Kluenkov, A.Ya. Lopatin, V.I. Luchin, N.N. Salashchenko, N.I. Chkhalo. Institute for Physics of Microstructures RAS, 603600, GSP-105, Nizhny Novgorod , Russia |
12.30 |
O1-02 |
Concept of EUV-lithography tool for scientific application. R. P. Seisyan, N. A. Kaliteevskaya, S. G. Kalmykov. A. F. Ioffe Physico-Technical Institute of the Russian Academy of Science, St. Petersburg , Russia |
12.50 |
O1-03 |
Inorganic thin films as potential photoresist in VUV and EUV ranges . N.A. Kaliteevskaya, S.I. Nesterov, R.P. Seisyan. A.F. Ioffe Physico-Technical Institute of the Russian Academy of Science, St. Petersburg , Russia |
13.10 |
O1-04 |
Sources of radiations on the basis of capillary discharges. V.A. Burtsev, E.P. Bolshakov, Н . В . Kalinin, V.A. Kubasov, R.F. Kurunov, V.G. Smirnov, V.I. Chernobrovin. Efremov Scientific Research Institute of Electrophysical Apparatus , St. Petersburg |
13.30 - 14.30 |
Lunch |
Conference Hall
Session 2. Nanodevices and Nanostructures I |
14.30 |
L1-5 |
INVITED:SOI nanotransistors: ultimate dimensions and fundamental limits. V. Popov. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia. |
15.00 |
O1-05 |
Poly-Si and FUSI gate electrodes on HfO 2 high-k gate dielectrics: in-situ characterization of growth, thermal stability and electronic structure A. Zenkevich 1 , Yu.Yu. Lebedinskii 1 , E.P. Gusev 2 , M. Gribelyuk 3 and V.N. Nevolin 1 1. Moscow Engineering Physics Institute, Russia ,2. IBM Semiconductor Research and Development Center , New York , USA , 3. IBM Systems and Technology Division (Microelectronics Group), Hopewell Junction , NY 12533 , USA |
15.30 |
O1-06 |
Quantum simulation of a silicon field-effect transistor. V. Vyurkov, A. Sidorov, and A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia |
15.50 |
O1-07 |
Spin relaxation of holes in Ge quantum dots. A. F. Zinovieva, A. V. Nenashev, A. V. Dvurechenskii. Institute of Semiconductor Physics, RAS, Novosibirsk , Russia |
16.10 |
O1-08 |
Heterostructures with the modulated conductivity. V. Gergel 1 , V. Kurbatov 2 , M. Rzaev 2 , A. Pogosov 2 , N. Sibeldin 2 , T. Burbaev 2 , M. Yakupov 1 . 1. Institute for Radio-Engineering and Electronics, Russian Academy of Science , Moscow , Russia , 2. P.N. Lebedev Physical Institute, Russian Academy of Science , Moscow , Russia |
| Room A.
Session 3. MEMS & Sensors |
14.30 |
O1-09 |
High-Speed bistable MEMS commutators. E.G. Kostsov, A.A. Kolesnikov. Institute of Automation and Electrometry, Russian Academy of Sciences , Novosibirsk, Russia |
14.50 |
O1-10 |
Probe metrology of MEMS-structures. N. Balan 1 , S. Gavrin 2 , A. Gruzdev 2 , S. Morozov 2 1. Angstrem Center Nanotech, Moscow , Russia 2. Moscow Engineering Physics Institute ( State University ) , Moscow , Russia |
15.10 |
O1-11 |
Analysis of Microelectromechanical Gyroscope Technological Faults. B. Konoplev, I. Lysenko. Taganrog State University of Radio-Engineering, Taganrog, Russia |
15.30 |
O1-12 |
Formation of released MEMS structures using the process of deep plasma Si etching. O.V. Morozov, I.I. Amirov. Institute of Microelectronics and Informatics RAS, Yaroslavl , Russia |
15.50 |
O1-13 |
The development of simulation approach for the modeling of the piezoresistive effect in microsystems engineering elements. T. Kroupkina , O. Pankratov , A. Pogalov. Moscow Institute of Electronic Engineering, Moscow , Russia |
16.10 |
O1-13D |
Mems Development in Russia . Petr P. Maltsev. Chief Editor of “ NANO – and MYCROSYSTEMS TECHNIQUES” Magazine, Moscow , Russia. |
|
Room B.
Session 4.
Photonics and Optoelectronics |
14.30 |
O1-14 |
From diffraction grating to photonic crystal: opaque bands formation. M. Barabanenkov * , Yu. Barabanenkov, S. Nikitov. * Institute of Microelectronics Technology and superpure materials, RAS, Chernogolovka, Russia, Institute of Radioengineering and Electronics, RAS, Moscow, Russia |
14.50 |
O1-15 |
Formation of two-dimensional photonic crystals by deep anodic etching. E. Yu. Gavrilin, V. V . Starkov, A. F. Vyatkin, and M. A. Knyazev. Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia |
15.10 |
O1-16 |
Formation of near-field optical vortexes at nanostructured metallic films A. A. Ezhov, S. A. Magnitskii, N. S. Maslova, D. A. Muzychenko, A. A. Nikulin, V.I. Panov. Faculty of Physics of M.V. Lomonosov Moscow State University , Moscow , Russia |
15.30 |
O1-17 |
Microstructured Optical Fibers – New Tool For Telecommunications. M. Ryabko * , Yu. Chamorovskii, I. Lissenkov, S. Nikitov Institute of Radioengineering and Electronics, Russian Academy of Sciences, 125009 Moscow , Russia |
15.50 |
O1-18 |
Optical properties of empty and filled hollow pin structures. M. Barabanenkov, V. Starkov. Institute of Microelectronics Technology and high-pure materials, Russian Academy of Sciences , Chernogolovka , Russia |
16.10 |
O1-19 |
The growth features of epitaxial Pb 1-X Mn X Se films and photosensitive p-n junctions on their basis. I.R. Nuriyev, A.M. Nazarov, R.M. Sadygov, M.B. Gadzhiev Institute of Physics of the National Academy of Sciences of Azerbaijan, Baku, Azerbaijan |
16.30 - 17.00 |
Coffee break. Winter garden |
|
Conference Hall
Session 5. Devices and ICs |
17.00 |
O1-20 |
X-band SPDT Switch MMIC based on directional coupler key. V.G. Mokerov, D.L. Gnatyuk, A.P. Lisitskii. Institute of UHF Semiconductor Electronics, Russian Academy of Sciences , Moscow , Russia |
17.20 |
O1-21 |
Integrated logic elements based on tunneling connected quantum wells. B. Konoplev 1,2 , E. Ryndin 2 . 1. Taganrog State University of Radio Engineering, Taganrog , Russia . 2. Laboratory of Nanoelectronics, South Scientific Center of Russian Academy of Science , Taganrog , Russia |
17.40 |
O1-22 |
The elementary adiabatic logic gates for digital information processing systems. V. Staroselsky 1 , V. Losev 1 1. Moscow State Institute of Electrinic Engenering, Moscow , Russia |
18.00 |
O1-23 |
Si-electrode of a fuel cells in the integral design V. Starkov, S. Shapoval. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia |
18.20 |
O1-24 |
An automatic synthesis method of compact models of integrated circuit devices based on equivalent circuits. I.I. Abramov. Belarusian State University of Informatics and Radioelectronics, Minsk , Belarus |
18.40 |
O1-24D |
Non-volatile electrically reprogrammable memory on self-forming conducting nanostructures. V. Mordvintsev, S. Kudryavtsev , V. Levin. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia. |
|
Room A.
Session 6.
Thin Films |
17.00 |
O1-25 |
Morphology and structure of PZT films. M. V. Silibin, V. M. Roshin, V. B. Yakovlev, M. S. Lovygina. Moscow Institute of Electronic Technologies ( Technical University ), 124498 Moscow , Zelenograd , Russia |
17.20 |
O1-26 |
Degradation kinetics of ALD grown HfO 2 layers on Si(100) during vacuum annealing monitored with in situ XPS/LEIS. Yu.Yu. Lebedinskii 1 , A. Zenkevich 1, N. Barantsev 1 , G. Scarel 2 , M. Fanciulli 2 and V.N. Nevolin 1 . 1. Moscow Engineering Physics Institute, Russia . 2. N ational Laboratory”Materials and Devices for Microelectronics”, INFM/CNR, Italy |
17.40 |
O1-27 |
The analogy of models of solid-phase epitaxial growth and atomic rearrangement at misfit strain relaxation i n epitaxial heterostructures. Vyatkin A. F. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia |
18.00 |
O1-28 |
Formation of Conductive Structures in Insulate Layers by Selective Removal of Atoms technique. B. Gurovich 1 , A. Domantovsky 1 , E. Kuleshova 1 , E. Ol'shansky 1 , K. Prikhodko 1 , Y. Lunin 2 . 1. Russian Research Center “Kurchatov Institute”, Moscow, Russia 2. Institute for System Studies, Russian Academy of Sciences, Moscow, Russia |
18.20 |
O1-29 |
Effects of negative differential resistance in TlIn 1-x Gd x Se 2 films. E.M. Gojaev, A.M. Nazarov*, K.Dj. Gulmammadov, S.S. Osmanova. Azerbaijan Technical University , Baku , Azerbaijan . * Institute of Physics of the National Academy of Sciences of Azerbaijan , Baku , Azerbaijan |
|
Room B.
Session 7.
Superconducting Structures |
17.00 |
L1-6 |
INVITED:Josephson junctions with ferromagnetic materials. M. Yu. Kupriyanov 1 , A.A. Golubov 2 . Institute of Nuclear Physics , Moscow State University , Moscow , Russia . 2. Faculty of Science and Technology, University of Twente , The Netherlands |
17.30 |
O1-30 |
Nonequlibrium properties of SIS'IS structure under microwave irradiation. A.V. Semenov 1 , I.A. Devyatov 2 , M.Yu. Kupriyanov 2 . 1. Department of Physics, Moscow State Pedagogical University, Moscow , Russia . 2. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University , Moscow , Russia |
17.50 |
O1-31 |
Out-of substrate plane orientation control of thin YBa 2 Cu 3 O x films on NdGaO 3 tilted-axes substrates. Peter B. Mozhaev 1 , Julia E. Mozhaeva 1 , Jorn B. Hansen 2 , Claus S. Jacobsen 2 , Igor K. Bdikin 3 , Iosif M. Kotelyanskii 4 , Valery A. Lusanov 4 , Andrey L. Kholkin 3 . 1. Institute of Physics and Technology RAS, Moscow , Russia 2. Department of Physics, Technical University of Denmark , Lyngby , Denmark .3. CICECO, University of Aveiro , Aveiro , Portugal 4. Institute of Radio Engineering and Electronics RAS, Moscow , Russia |
18.10 |
O1-32 |
Calibration of quantum detector of noise based on a system of asymmetric superconducting loops. V.L. Gurtovoi, S.V. Dubonos, A.V. Nikulov, N.N. Osipov and V.A. Tulin. Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia |
18.30 |
O1-32D |
Nonuniform magnetic field of ferromagnetic nanoparticle as source for
control transport properties of superconductor structures. A.A. Fraerman1,
B.A. Gribkov1, S.A. Gusev1, E. Il'ichev2, A.Yu. Klimov1, Yu.N. Nozdrin1,
G.L. Pakhomov1, V.V. Rogov1, R. Stolz2, D. Y. Vodolazov1 and S.N. Vdovichev1
1. Institute for Physics of Microstructures RAS, GSP 105, 603950 Nizhny
Novgorod, Russia, 2. Institute for Physical High Technology, Jena, Germany. |
19.00 |
Dinner |
|
Wednesday, October 5th 2005 |
8.15 |
Breakfast |
|
Conference Hall
SYMPOSIUM QI-2005
|
9.00 |
Q-01 |
K.A.Valiev (FTIAN) Introductory remarks. Review of quantum informatics: results and perspectives |
9.30 |
Q-02 |
V.Akulin (Univ. Orsay, invited) Entanglement distribution along 2-dimensional lattice of qubits |
10.00 |
Q-03 |
A.S.Holevo (MIAN, invited), Photon localisation: observed location and uncertainty relations |
10.30 |
Coffee break |
|
Conference Hall
Session 8. Nanodevices and Nanostructures II
|
10.50 |
O2-01 |
Electronic transport through silicon nanocrystals embedded in SiO 2 matrix. M.D. Efremov, S.A. Arzhannikova, G.N. Kamaev, G.A. Kachurin, A.V. Kretinin, V.V. Malutina?Bronskaya, D.V. Marin, V.A. Volodin, S.G. Yanovskaya. Institute of Semiconductor Physics, RAS , Novosibirsk , Russia |
11.10 |
O2-02 |
Calculation of the secondary charge carriers current in submicron channel MOSFETs at stress regimes of operation. V.M. Borzdov, F.F. Komarov, O.G. Zhevnyak, V.O. Galenchik, D.V. Pozdnyakov, A.V. Borzdov. Belarus State University , Minsk , Belarus |
11.30 |
O2-03 |
Novell flash devices based on high-k dielectrics. V.A. Gritsenko, K. A. Nasyrov. Institute of Semiconductor Physics, Novosibirsk |
11.50 |
O2-04 |
Formation of silicon-on-insulator structures with low surface roughness. F. Komarov, O. Milchanin, E. Boiko . Institute of Applied Physics Problems, Belarusian State University , Minsk , Belarus |
12.10 |
O2-05 |
Hopping conductivity as a predominant mechanism of current transport in thermally oxidized nanoporous silicon. L.V. Grigoryev 1 , I.M. Grigoriev 1 , V. Zamoryanskaya 2 , A.E. Kalmykov 2 , V.I. Sokolov 2 , L.M. Sorokin 2 . 1. V.A.Fock Institute of Physics, Saint-Petersburg State University , Russia 2. A.F.Ioffe Physico-Technical Institute, Saint-Petersburg , Russia |
12.30 |
O2-06 |
Transport phenomena in interference transistor. A.A. Gorbatsevich 1 , V.V. Kapaev 2 . 1. Moscow Institute of Electronic Technology ( Technical University ), Moscow , Russia 2. P.N. Lebedev Physical Institute, Moscow , Russia. |
|
Room A.
SYMPOSIUM QI-2005 |
11.00 |
Q-04 |
L.E.Fedichkin (Clarkson University, invited), Decoherence models for spin ensembles |
11.30 |
Q-05 |
S.Ya.Kilin (Inst.Physics, Minsk, invited), To be determined |
12.00 |
Q-06 |
A.Khrennikov (Univ.Vaxio, Sweden, invited), Quantum mechanics as projection of classical statistical mechanics |
12.30 |
Q-07 |
M.Mensky (FIAN), Quantum-computer toy model of consciousness according to the extended Everett conception |
|
Room B.
Session 9. Magnetic Micro- and Nanostructures |
11.00 |
O2-07 |
Sd-exchange switching in magnetic junctions having non-pinned current carrier spins . E.M. Epshtein, Yu.V. Gulyaev, P.E. Zilberman. Institute of Radio Engineering and Electronics of RAS, Fryazino , Russia |
11.20 |
O2-08 |
Moessbauer spectra of nanomagnets within rotating hyperfine field. N. P. Aksenova , M. A. Chuev. Institute of Physics and Technology , RAS, Moscow , Russia |
11.40 |
O2-09 |
Magnetoresistance Of Coupled Quantum Wells In Quantizing Magnetic Field. V.E. Kaminskii 1 , G.B. Galiev 1 , V.G. Mokerov 1 , I.S. Vasil'evskii 2 , R.A. Lunin 2 , V.A. Kul'bachinskii 2 . 1 Institute of UHF Semiconductor Electronics, Russian Academy of Sciences , Moscow . 2 Moscow State University, Department of Low Temperature Physics, Moscow , Russia |
12.00 |
O2-10 |
Two-Dimensional Magnonic Crystals Based on Ferromagnetic Films. Yu.A. Filimonov 1 , Yu.V. Gulyaev , S.A. Nikitov * , S.V. Vysotskii 1 . Institute of Radioengineering and Electronics, Russian Academy of Sciences, Moscow, Russia 1 Institute of Radioengineering and Electronics, Russian Academy of Sciences, Saratov Branch, Russia |
12.20 |
O2-11 |
Exchange interactions in a ferrimagnetic ring. V. Kostyuchenko 1 , M. Kostyuchenko 2 . Institute of Microelectronics and Infirmatics, Russian Academy of Sciences , Yaroslavl , Russia . 2. Yaroslavl State Technical University , Yaroslavl , Russia |
12.40 |
O2-11D |
MFM tip induced remagnetization effects in ferromagnetic sub-micron sized
particles. B.A.Gribkov, S.A.Gusev, A.A.Fraerman, I.R.Karetnikova,
V.L.Mironov, I.M.Nefedov, N.I.Polushkin, I.A.Shereshevsky, S.N.Vdovichev.
Institute for Physics of Microstructures, Russian Academy of Sciences,
Nizhny Novgorod, Russia |
13.00 |
Lunch |
|
Conference Hall
Session 10. Plasma Technologies
|
14.00 |
O2-12 |
Precision Plasma Technologies: Equipment and Processes. A.A. Orlikovsky, K.V. Rudenko, S.N. Averkin. Institute of Physics & Technology RAS, (FTIAN), Moscow , Russia |
14.20 |
O2-13 |
A self-consistent model for the HCl dc glow discharge: plasma parameters and active particles kinetics. A. Efremov, V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo , Russia |
14.40 |
O2-14 |
Ultra shallow p + -n junctions in Si produced by plasma immersion ion implantation. К . Rudenko 1 , S. Averkin 1 , V. Lukichev 1 , A. Orlikovsky 1 , A. Pustovit 2 , A. Vyatkin 2 . 1. Institute of Physics & Technology, RAS, Moscow , Russia . 2. Institute of Microelectronics Technology and High-Purity Materials, RAS, Chernogolovka , Russia |
15.00 |
O2-15 |
Plasma enhanced chemical vapor deposition of multifunctional nanocrystalline films of silicon carbornitride. Nadezhda I. Fainer*, Yuri M. Rumyantsev, Marina L. Kosinova, Evgeni A. Maximovski, Fedor A. Kuznetsov. Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk , Russia |
15.20 |
O2-16 |
Ionized PVD with an electron cyclotron resonance plasma source. N. Poluektov, V. Kharchenko, I. Kamyschov, Yu. Tsar'gorodsev. Moscow State Forestry University , Mytischi, Moscow Region , Russia |
15.40 |
O2-17 |
Simulation of the feature profile evolution in during deep plasma etching of Si by the cell-string hybrid method. A.S. Shumulov, I.I. Amirov. Institute of Microelectronics and Informatics RAS, Yaroslavl , Russia |
|
Room A.
SYMPOSIUM QI-2005 |
14.00 |
Q-08 |
Pavel Kurakin , George Malinetskii , Howard Bloom ( Keldysh Institute of Applied Mathematics , New York University ), Dialogue model of quantum dynamics |
14.20 |
Q-09 |
F.Ablayev, A.Gainutdinova (Kazan State Univ., Russia), On complexity properties of quantum uniform and nonuniform automata |
14.40 |
Q-10 |
A.Y.Okulov (FIAN), Quantum billiards with nonlinear boundaries |
15.00 |
Q-11 |
Yu.I.Bogdanov, R.F.Galeev, S.P.Kulik, G.A.Maslennikov, and E.V.Moreva (MSU), Statistical Reconstruction of Biphoton Polarization States. |
15.20 |
Q-12 |
S.N.Molotkov, A.V.Timofeev, A.P.Makkaveyev, D.I.Pomozov (IFFT, FTIAN), New algorithms for the key purification in quantum cryptography |
15.40 |
Q-13 |
Y.I.Ozhigov, I.N.Semenihin, A.S.Burkov, A.V.Damir (MSU, FTIAN) |
|
Room B.
Session 11. Simulation and Modeling I |
14.00 |
O2-18 |
INVITED: Actual Problems of Modeling in Micro- and Nanoelectronics. R.V. Goldstein, V.V. Ivin, V.P. Kudrya, T.M. Makhviladze, A.Kh. Minushev, K.P. Novoselov , M.E. Sarychev. Institute of Physics and Technology, Russian Academy of Sciences; JSC SOFT-TEC, Moscow , Russia |
14.20 |
O2-19 |
Complex simulation of electron process of deep submicron MOSFET based on energy balance equation. V.A. Gergel 1 , M.N. Yakupov 2 . 1. The Institute for Radio-Engineering and Electronics, RAS, Moscow . 2. JSC Mikron, Zelenograd , Russia |
14.40 |
O2-20 |
Nonequilibrium Diagrammatic Technique for Nanoscale Devices. G. I. Zebrev. Department of Microelectronics, Moscow Engineering Physics Institute, Russia |
15.00 |
O2-21 |
Monte Carlo simulation of device structures with one-dimensional electron gas. V.M. Borzdov, F.F. Komarov, V.O. Galenchik, D.V. Pozdnyakov, A.V. Borzdov, O.G. Zhevnyak. Belarus State University , Minsk , Belarus |
15.20 |
O2-22 |
Process and device simulation: problems of effective use for microelectronics and microsystems engineering products design. Y. Chaplygin, M. Korolev, T. Kroupkina. Moscow Institute of Electronic Engineering, Moscow , Russia |
15.40 |
O2-23 |
Modeling of spin polarization in InAs/GaSb quantum wells under a longitudinal current. A. Zakharova 1 , I. Lapushkin 1 , S.T. Yen 2 , K. Nilsson 3 , K.A. Chao 3 . 1. Institute of Physics and Technology of RAS, Russia ; 2. Department of Electronics Engineering, National Chiao Tung University , Taiwan ; 3. FTT, Department of Physics, Lund University , Sweden |
16.10 |
Coffee break |
|
16.30 Entresol.
POSTER SESSION I |
|
Bottom hall.
Exhibition |
19.00 |
Dinner |
|
Thursday, October6 th 2005 |
8.15 |
Breakfast |
|
Conference Hall
Session 12. Nanostructures Technologies I
|
9.00 |
L3-7 |
INVITED: NANOFAB: The base, multipurpose, research and technological complex . V.A. Bykov , D.V. Veryovkin , NT-MDT Co, State Research Institute of Physical Problems, 124460, Moscow, Russia |
9.30 |
O3-01 |
Silicon Nanoclusters in SiN x Matrix: Formation by LF PECVD and Properties. A.E. Berdnikov 1 , A.A. Popov 1 , V.D. Chernomordick 1 , M.D. Efremov 2 , V.A. Volodin 2 , D.V. Marin 2 , N.V. Vishnyakov 3 , I.G. Utochkin 3 . 1. Institute of Microelectronics and Informatics Russian Academy of Sciences, Yaroslavl , Russia . 2. Institute of Semiconductors Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk , Russia . 3 Ryazan state radiotechnical academy, Ryazan , Russia |
9.50 |
O3-02 |
Formation of ordered arrays of Ag nanowires and nanodots on Si(557) surface. R. Zhachuk, S. Teys, A. Dolbak, B. Olshanetsky. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia |
10.10 |
O3-03 |
Synthesis of nanowires by pulsed current electrodeposition. A. N. Belov, S. A. Gavrilov. Moscow Institute of Electronic Technologies ( Technical University ), 124498 Moscow , Zelenograd , Russia |
10.30 |
O3-04 |
The relationship between magnetoresistance and magnetomechanical effects in electrodeposited nickel nanocontacts. A. Bukharaev, P. Borodin, D. Biziaev, R. Gatiiatov. Zavoisky Physical Technical Institute of Russian Academy of Sciences, Kazan , Russia |
|
Room A.
SYMPOSIUM QI-2005 |
9.00 |
Q-14 |
V.V.Aristov, A.V.Nikulov (Inst., microelectronics techn.) Could EPR correlation be in superconducting structures |
9.20 |
Q-15 |
I.I.Ryabtsev, D.B.Tretyakov, I.I.Beterov, V.M.Entin (Institute of Semiconductor Physics ), Application of Rydberg atoms to quantum computing |
9.40 |
Q-16 |
G.Yu. Kryuchkyan and H.H. Adamyan (Yerevan State Univ.), Non-stationary entanglement and squeezing beyond the standard limits |
10.00 |
Q-17 |
A. Kalachev, V. Samartsev (Kazan Physical-Technical Institute) Quantum storage and quantum calculations using subradiant states of atomic ensembles |
10.20 |
Q-18 |
Yu.I. Bogdanov (FTIAN), Quantum tomography of arbitrary spin states of particles: root approach |
10.40 |
Q-19 |
A.A.Kokin (FTIAN), The antiferromagmet-based nuclear spin quantum register in inhomogeneous magnetic field |
|
Room B.
Room B. Session 13. Simulation and Modeling II |
9.00 |
O3-05 |
Modeling of diffusion of As i mplanted in Si at low energies and high fluences. F.F. Komarov 1 , O.I. Velichko 2 , A.M. Mironov 1 , V.A. Tsurko 3 , G.M. Zayats 3 . 1. Institute of Applied Physics Problems, Belarusian State University , Minsk , Belarus , 2. Belarusian State University on Informatics and Radioelectronics, Minsk , Belarus 3. Institute of Mathematics , Academy of Sciences of Belarus , Minsk , Belarus |
9.20 |
O3-06 |
Atomic mechanisms of cluster diffusion on metal surface. O.S. Trushin 1 , P. Vikulov 1 , V.V. Naumov 1 , A. Karim 2 , A. Kara 2 and T. Rahman 2 . 1. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia , 2. Kansas State University , Manhattan , KS , USA |
9.40 |
O3-07 |
Possibility of non-equilibrium phase transitions in the atmosphere of own silicon defects . E.P. Svetlov-Prokop'ev 1 , S.P. Timoshenkov 2 , V.V. Dyagilev 2 , V.V. Kalugin 2 . 1. State Scientific Center RF Institute for Theoretical and Experimental Physics, Moscow , Russia 2. Moscow Institute of Electronics Technology ( Technical University ), Moscow , Russia |
10.00 |
O3-08 |
Melting behavior of metals in matrix of porous anodic alumina. A. N. Belov 1 , S. A. Gavrilov 1 , D. A. Kravchenko 1 , D. G. Gromov 1 , A. S. Malkova 1 , A. A. Tikhomirov 2 . 1. Moscow Institute of Electronic Technologies ( Technical University ), Zelenograd , Russia , 2. NT-MDT Corporation,, Zelenograd , Russia |
10.20 |
O3-09 |
On the Surface Pressure and the Fragmentation of a Nanocrystal. M.N. Magomedov. Institute for Geothermal Research of Daghestan S cientific Centre RAS , Makhachkala , Russia |
11.00 |
Coffee break |
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Conference Hall
Session 14. Nanostructures Technologies II
|
11.30 |
O3-10 |
Prospects of Semiconductor Vacuum Technologies in Space. V.V. Blinov 1 , A.I. Nikiforov, O.P. Pchelyakov 1 , L.V. Sokolov 1 , A.I. Ivanov 2 , I.V. Tchurilo 2 , V.V. Teslenko 2 , L.L. Zvorykin 2 . 1. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 2. Rocket Space Corporation "Energiya", Korolev , Russia |
11.50 |
O3-11 |
Dense arrays of Ge nanoclusters induced by low-energy ion-beam assisted deposition on SiO 2 films. A.V. Dvurechenskii 1 , P.L. Novikov 1 , Y. Khang 2 , Zh.V. Smagina 1 , V.A. Armbrister 1 , A.K. Gutakovskii 1 . 1. Institute of Semiconductor Physics, Russian Academy of Sciences , Novosibirsk , Russia , 2. Samsung Electronics Co, Samsung Advanced Institute of Technology , Yongin-Si , Korea |
12.10 |
O3-12 |
Diffusion and phase formation in ternary silicate systems framed by an ion bombardment . S. Krivelevich, E. Buchin, Yu. Denisenko, R. Selukov. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia |
12.30 |
O3-13 |
Forming Matrix Nanostructures in Silicon . A.V. Barkhudarov 1 , S.A. Gavrilov 1 , A.A. Golishnikov 2 , M.G. Putrya 1 . 1. Mosc ow Institute of Electronic Technology (MIET), Zelenograd , Russia 2. SMC “Technological Center” MIET, Zelenograd, Russia |
12.50 |
O3-14 |
The combined electromagnetic mirror as the probable breakthrough tool in electron and ion nanotechnology. V. A. Zhukov 1 , A. V. Zavyalova 2 . 1. .Institute for Informatics and Automation, Russian Academy of Sciences, Saint-Petersburg, Russia . 2. Vavilov State Optical Institute, Saint-Petersburg , Russia |
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Room A.
SYMPOSIUM QI-2005 |
11.30 |
Q-20 |
V.L. Kurochkin, I.I.Ryabtsev, A.V.Zverev, V.K.Ovchar, I.G.Neizvestny, S.Moon, B.S.Bae, H.J.Shin, J.B.Park, C.W.Par k (Inst. semiconductor physics, Korea inst science technology), Experimental setup for long-distance quantum cryptography via optical fiber lines |
11.50 |
Q-21 |
M. Kutcherov ( Krasnoyarsk State Technical University ), Thermal entanglement in a case of two spin temperatures |
12.10 |
Q-22 |
S.N. Dоbryakov , V.V.Privezentsev (N.N.Semenov Institute of chemical physics , FTIAN), Simulation of EPR spectra of the singlet and triplet states of zinc-phosphorus two-spin system in silicon |
12.30 |
Q-23 |
H. Thapliyal, M.B.Srinivaz (Int.Inst.informational technology, Hyderabad), Novel reversible TSG gate and its applications for designing components of primitive reversible/quantum ALU |
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Room B.
Session 15. Micro- and Nanostructures Characterization I |
11.30 |
O3-15 |
Low frequency current noise spectroscopy as a tool to study disordered materials . M.I. Makoviychuk 1 , A.L. Chapkevich 2 , E.O. Parshin 1 . 1. Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia 2. Moscow Committee of Science and Technologies, Moscow , Russia |
11.50 |
O3-16 |
Compensation Technique in Scanning Capacitance Microscopy. V. V. Polyakov 1 , I. V. Myagkov 2 , G. A. Tregubov 2 , An. V. Bykov 3 . 1. Moscow Institute of Physics and Technology , Russia . 2. State Research Institute for Physical Problems, Moscow , Russia . 3. NT-MDT Company, Moscow , Russia |
12.10 |
O3-17 |
Simultaneous fitting of several X-ray rocking curves from different crystallographic planes of multilayer heterostructures. M. A. Chuev 1 , A. A. Lomov 2 , R. M. Imamov 2 , I. A. Ivanov 1 . 1. Institute of Physics and Technology , Russian Academy of Sciences, 117218 Moscow , Russia 2. A.V. Shubnikov Institute of Crystallography, Russian Academy of Sciences , Moscow , Russia |
12.30 |
O3-18 |
Poly- and nanocrystalline diamond films: optical, electrical and thermal properties. V. G. Ralchenko 1 , A. F. Popovich 1 , A.V. Saveliev 1 , I.I. Vlasov 1 , A.V. Khomich 2 , V.I. Kovalev 2 , G.V. Chucheva 2 , A.D. Bozhko 3 , M.V. Chukichev 3 , A.G. Kazanskyi 3 , F.X. Lu 4 , W.M. Mao 4 , G.C. Chen 4 . 1. General Physics Institute, Russian Academy of Sciences , Moscow , Russia . 2. Institute of Radiotechnics and Electronics, Russian Academy of Sciences , Fryazino , Russia . 3. M.V.Lomonosov Moscow State University , Department of Physics , Russia 4. School of Materials Science and Engineering University of Science and Technology Beijing , P.R. China |
13.30 |
Lunch |
|
Conference Hall
Session 16. Micro- and Nanostructures Characterization II
|
14.20 |
O3-19 |
Linear Sizes Measurements of Relief Elements with the Width Less Than 100 nm on a SEM. Yu.A. Novikov 1 , A.V. Rakov 1 , P.A. Todua 2 . 1. General Physics Institute, Russian Academy of Science , Moscow , Russia . 2. Center for Surface and Vacuum Research, Moscow , Russia |
14.40 |
O3-20 |
Peculiarities of the electrical characteristics of the pseudomorphous SiGe/Si MODFET structures with a corrugated surface. L.K. Orlov, Zs. Horvath**, A.S. Lonchakov*, M.L. Orlov. IPM RAS, Nizhny Novgorod, * ) IMP UrB RAS, Ekaterinburg , Russia ; ** ) RITP&MS, HAS, Budapest , Hungar y |
15.00 |
O3-21 |
Spectroscopic ellipsometry based on binary modulation polarization. V.I. Kovalev, A.I. Rukovishnikov. Institute of Radio Eng. & Electronics, Russian Academy of Sciences, Fryazino, Russia |
15.20 |
O3-22 |
Analysis of functionalities basic modes in Atomic Force Microscopy. S. Krasnoborodko, V. Shevyakov, A. Tihomirov. Moscow Institute of Electronic Equipment ( Technical University ), Zelenograd , Russia |
15.40 |
O3-23 |
Characterization of strained-Si/SiGe/Si heterostructures with capacitance methods. N. Yarykin 1 , R. Zhang 2 , G. Rozgonyi 2 . 1. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Russia, 2.Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC, USA |
16.00 |
O3-24 |
Structural and nonlinear-optical studies of ultrathin Si/SiO 2 multiple quantum wells. A.A. Lomov 1 , A.G. Sutyrin 1 , D. Yu. Prohorov 1 , F.A. Pudonin 2 , T.V. Dolgova 3 , A.A. Fedyanin 3 , and O.A. Aktsiperov 3 . 1. Institute of Crystallography of RAS, Moscow , Russia . 2. Lebedev Physical Institute of RAS, Moscow , Russia 3.Department of Physics, Moscow State University , Russia |
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Room A.
SYMPOSIUM QI-2005 |
14.20 |
Q-24 |
A.Yu. Bogdanov, Yu.I. Bogdanov, K.A. Valiev (FTIAN), Analysis of localized Schmidt decomposition modes and of entanglement in atomic and optical quantum systems with continuous variables |
14.40 |
Q-25 |
V.P.Gerdt, V.Severianov (JINR) An algorithm for constructing polynomial systems whose solution space sharacterizes quantum circuits |
15.00 |
Q-26 |
A.Mandilara (Washington University), Description of entanglement with nilpotents polynomials |
15.20 |
Q-27 |
V. Vyurkov, L. Gorelik, and A.Orlikovsky (FTIAN, Chalmers Univ.), Measurement of a spin qubit array with a quantum wire |
15.40 |
Q-28 |
V. Vyurkov, I. Semenikhin, L.Fedichkin, and A. Khomyakov (FTIAN, Clarkson Univ.) Effect of image forces on a charge qubit operation |
16.00 |
Q-29 |
A.Tsukanov (FTIAN), To be deternimed |
|
Room B.
Session 17. Defects and Impurities in Semiconductors |
14.20 |
O3-25 |
Low-temperature atomic hydrogen annealing of ion-implanted Si layers. V. Kagadei 1 , E. Nefyodtsev 2 , R. Groetzschel 3 , S. Romanenko 2 , A. Markov 2 . 1. Research Institute of Semiconductor Devices, Tomsk , Russia 2. Institute of High Current Electronics , Russian Academy of Sciences , Tomsk , Russia 3. Institute of Ion Beam Physics and Materials Research, Forschungszentrum Rossendorf, Dresden , Germany |
14.40 |
O3-26 |
Determination of oxygen and carbon in silicon monocrystals by radiative-luminescent method. A.V. Yukhnevich. Research Institute for Physico-Chemical Problems of Belarussian State University , Minsk , Belarus |
15.00 |
O3-27 |
Impurity-defect interaction at the Yb + implanted silicon annealing. D.I. Brinkevich, V.S. Prosolovich and Yu.N. Yankovski. Belorussian State University , Minsk , Belarus |
15.20 |
O3-28 |
Characteristics of the implant-isolated GaAs layers after annealing. F.F. Komarov 1 , A.M. Mironov 1 , P. Zukowski 2 . 1. Belarussian State University , Minsk , Belarus , 2. Lublin University of Technology , Lublin , Poland |
16.20 |
Coffee break |
|
16.30 Entresol.
POSTER SESSION II |
|
Bottom hall.
Exhibition |
19.30 |
Banquet |
|
Friday, October 7th , 2005 |
9.00 |
Breakfast |
10.00 |
Departure |
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