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ICMNE-2007 AND SYMPOSIUM QI-2007 SCIENTIFIC
PROGRAM
(Final Edition)
(Oral
Presentations)
Download files:
ICMNE-2007 Oral
Presentations
ICMNE-2007
Posters
ICMNE-2007
Delayed Posters
QI-2007
Oral Presentations
|
Monday, October 1st , 2007 |
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9.00 - … |
Registration & Accommodation |
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13.00 - 14.00 |
Lunch |
| Conference hall
Special
Session.
Presentations of Hi-Tech Companies.
|
|
16.00 |
S1-1 |
NANOFABS – basic systems for new developments in the field of nanoelectronics & micro-, nanomechanics. V.A. Bykov, V.V. Kotov, V.V. Polyakov, V. Atepalikhin. NT-MDT Company, Moscow , Russia . |
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16.30 |
S1-2 |
The future of nano technology based on electron microscopy. Uwe Schubert. Nano Technology Systems Division Carl Zeiss SMT AG |
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17.00 |
S1-3 |
The inspection of SEM into the third dimension. Peter Gnauck. Nano Technology Systems Division Carl Zeiss SMT AG |
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17.30 |
S1-4 |
Will be announced later |
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18.00 |
Welcome Party |
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19.00 |
Dinner |
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Tuesday, October 2nd , 2007 |
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Conference hall |
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8.00 |
Breakfast |
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8.40 |
Welcome remarks
E.P. Velikhov, Conference Chair, RSC “Kurchatov Institute”, Moscow
K.A. Valiev, Program Chair, IPT RAS, Moscow
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Plenary Session
Session Chairman: Alexander Orlikovsky, Institute of Physics &Technology RAS, Russia |
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8.50 |
L1-01 |
KEYNOTE: Materials and MOS device architectures for the sub-32 nm node. Th. Skotnicki and S. Monfray. ST Microelectronics, Crolles , France |
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9.30 |
L1-02 |
INVITED: High-k dielectric films for advanced microelectronics. A. Toriumi. University of Tokyo , Japan |
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10.10 |
L1-03 |
INVITED: Low-k dielectrics for microelectronics. M. Baklanov . IMEC, Leuven , Belgium . |
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10.40 |
L1-04 |
INVITED: Bottom-up interconnect formation possibility using supercritical fluids: beyond scalability. E. Kondoh. University of Yamanashi, Japan. |
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11.10 |
L1-05 |
INVITED: Physics and Applications of Graphene. K.S. Novoselov 1 , S.V. Morozov 2 , A.K. Geim. 1. School of Physics and Astronomy, University of Manchester , Manchester , UK 2. Institute for Microelectronics Technology, Chernogolovka , Russia |
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11.40 - 12.00 |
Coffee break. Winter garden |
|
Conference Hall
Session 1. Sub-100 nm Lithography
Session Chairman: Kamil Valiev, Institute of Physics &Technology RAS, Russia |
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12.00 |
O1-01 |
Manufacturing and investigation of objective lens for ultrahigh resolution lithography facilities. N. Chkhalo, E. Kluenkov, A. Pestov, D. Raskin, N. Salashchenko. Institute for Physics of Microstructures, RAS, Nizhny Novgorod , Russia |
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12.20 |
O1-02 |
Multilayer Zr/Si filters for EUV lithography and for radiation source metrology. M.S. Bibishkin 1 , N.I. Chkhalo 1 , S.A. Gusev 1 , E.B. Kluenkov 1 , A.Ja. Lopatin 1 , V.I. Luchin 1 , A.E. Pestov 1 , N.N. Salashchenko 1 , L.A. Shmaenok 2 , N.N. Tsybin 1 . 1. Institute for Physics of Microstructures, RAS, Nizhny Novgorod , Russia . 2. PhysTeX, Vaals , Netherlands |
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12.40 |
O1-03 |
Alternating Phase Shift Mask design problem statement. M. Myachin 1 , N. Savinski 2 , G. Krasnikov , 3 N. Shelepin 3 , O. Gutshin 3 , I. Sirtsov 3 , A. Sutyagin 3 . 1. Yaroslavl State University , Yaroslavl , Russia 2. Institute of Physics &Technology, RAS, Yaroslavl Branch , Russia , 3. JSC Mikron , Zelenograd, Moscow |
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13.00 |
O1-04 |
Modification of nanolithography method using optical tweezers for planar nanostructures fabrication. I.V. Soboleva, A.G. Zhdanov, A.A. Fedyanin. Faculty of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia |
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Auditorium A
Session 2. Simulation and Modeling I
Session Chairman: Tariel Makhviladze, Institute of Physics &Technology RAS, Russia |
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12.00 |
L1-06 |
INVITED: New Results of Modeling in Micro- and Nanoelectronics. R. Goldstein 1 , T. Makhviladze 2 , M. Sarychev 2 . 1. Institute for Problems in Mechanics, RAS, Moscow , Russia . 2. Institute of Physics and Technology, RAS, Moscow , Russia |
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12.30 |
O1-05 |
The process window TCAD methodology for DFM in the field of deep submicron nodes and nanoscale transistors. Y. Chaplygin, M. Korolev, T. Krupkina. Moscow Institute of Electronic Engineering, Moscow , Russia |
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12.50 |
O1-06 |
The TCAD estimation of electrical stability for different layout SOI MOSFETs. T. Krupkina. Moscow Institute of Electronic Engineering, Moscow , Russia |
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13.10 |
O1-07 |
Technology modelling of microsystem technics devices. A. Kozlov, D. Rodionov. Moscow Institute of Electronic Technology, Moscow , Zelenograd , Russia |
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Auditorium B
Session 3. Defects and Impurities in Semiconductors
Session Chairman: Eugene Yakimov, Institute of Microelectronics Technology , Russia |
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12.00 |
O1-08 |
Spatial distribution of electrically active defects in strained-Si / SiGe / Si heterostructures. N. Yarykin 1 , E. Yakimov 1 , G. Rozgonyi 2 . 1. Institute of Microelectronics Technology, Russian Academy of Sciences , Chernogolovka , Russia . 2. Department of Materials Science and Engineering, North Carolina State University , Raleigh , NC , USA |
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12.20 |
O1-09 |
Stable silicon resistors at 20-160 ° C due to divacancy involving in high purity neutron doped Si. G.N. Kamaev, M.D. Efremov, V.A. Stuchinsky, B.I. Mihailov, S.G. Kurkin. Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia |
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12.40 |
O1-10 |
Application of SQUID for detection of a small quantity of spin impurity in semiconductors. A.I. Golovashkin 1 , A.L. Karuzskiy 1 , A.A. Orlikovsky 2 , V.V. Privezentsev 2 , A.M. Tshovrebov 1 . 1. Lebedev Physical Institute, Russian Academy of Science , Moscow , Russia ; 2. Institute of Physics & Technology, Russian Academy of Science , Moscow , Russia |
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13.00 |
O1-11 |
Determination of isotope ratio of boron in B-alloyed crystals of diamond by SIMS. A.N. Pustovit 1 , E.A. Ekimov 2 , I.I. Vlasov 3 , A.F. Vyatkin 1 . 1. Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia . 2. Vereshchagin Institute for High Pressure Physics, RAS, Troitsk, Moscow region, Russia . 3. General Physics Institute, RAS, Moscow , Russia |
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13.30 - 14.30 |
Lunch |
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Conference Hall
Session 4. Nanodevices and Nanostructures I
Session Chairman: Oleg Pchelyakov, Institute of Semiconductor Physics SB RAS, Russia |
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14.30 |
O1-12 |
From molecularly to atomically thin solid nanoshells: fabrication, properties and applications. V.Ya. Prinz, V.A. Seleznev, S.V. Golod. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia |
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14.50 |
O1-13 |
Fabrication of nanostructures for stamps production used in nanoimprint lithography by means of focused ion beam technique. A.F. Vyatkin 1 , Yu. A. Agafonov 1 , V.I. Zinenko 1 , Yu. M. Lunin 1 , B.G. Freikman 1 , V.I. Balykin 2 , P.N. Melent'ev 2 . 1. Institute of Microelectronics Technology, RAS, Moscow district, Chernogolovka, Russia . 2. .Institute of spectroscopy, RAS, Moscow district, Troitsk |
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15.10 |
O1-14 |
Comparative Analysis of Pseudo-Potential and Tight-Binding Band Structure Calculations with an Analytical Two-Band k·p Model: Conduction Band of Silicon. V. Sverdlov 1,2 , H. Kosina 1 , and S. Selberherr 1 . 1. Institute for Microelectronics, TU Wien, Wien , Austria . 2. V.A. Fock Institute of Physics, State University of St.Petersburg , St.Petersburg , Russia |
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15.30 |
O1-15 |
Graphene Nanoelectronics: Device Electrostatics and Kinetics. G. I. Zebrev. Department of Microelectronics, Moscow Engineering Physics Institute, Russia |
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15.50 |
O1-16 |
Quantum Conductivity of Linear Chain Carbon. M.B. Guseva, V.G. Babaev , N.D. Novikov, V.V. Khvostov. Department of Physics, Moscow State University , Moscow , Russia |
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Auditorium A
Session 5. MEMS & Sensors
Session Chairman: Vladimir Lukichev, Institute of Physics &Technology RAS, Russia |
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14.30 |
O1-17 |
Divergence Instability o f a Extensible Microplate Subjected to Nonlinear Electrostatic Pressure. Gh. Rezazadeh 1 , H. Yagubizade 1 , Y. Alizadeh 2 . 1. Mech. Eng. Dept., Urmia University , Urmia , Iran . 2. Mech. Eng. Dept., Arak Azad University , Arak , Iran |
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14.50 |
O1-18 |
Simulation, formation and dynamic characteristics of e lectrostatically actuated switches . A.V. Postnikov 1 , I.I. Amirov 1 , V.V. Naumov 1 , V.A. Kalnov 2 . 1. Institute of microelectronics, Russian Academy of Science, Yaroslavl, Russia 2. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia |
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15.10 |
O1-19 |
High energy microelecromechanical oscillator based on the electrostatic microactuator. I. Baginsky, E. Kostsov , V. Sobolev. Institute of Automation and Electrometry, SB RAS, Novosibirsk , Russia |
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15.30 |
O1-20 |
Application of single crystals of lithium niobate with bidomain structure for creation actuators of micro and nano moving ranges. V.Antipov, A.Bykov, M.Malinkovich 1 , Y.Parkhomenko. Moscow Institute Of Steel And Alloys (Technological University), Moscow , Russia |
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15.50 |
O1-21 |
Electromechanical energy conversion in the nanometer gaps. E.G. Kostsov. Institute of Automation and Electrometry, SB RAS, Novosibirsk , Russia |
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16.10 |
O1-22 |
Flicker-noise gas sensors as basis elements of microanalytical systems. M. Makoviychuk. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia |
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Auditorium B
Session 6. Photonics and Optoelectronics
Session Chairman: Sergey Nikitov, Institute of Radioengineering and Electronics RAS, Russia |
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14.30 |
O1-23 |
Distant- and interference-spatial spectroscopy of evanescent waves . M.Yu. Barabanenkov*, Yu.N. Barabanenkov , S.A. Nikitov. * Institute of Microelectronics Technology, RAS, Chernogolovka , Russia . Institute of Radioengineering and Electronics, RAS, Moscow , Russia |
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14.50 |
O1-24 |
Polarization switching dynamics of nonlinear ferroelectric photonic crystals. N.E. Sherstyuk 1 , E.D. Mishina 1 , V.M. Muhortov 2 . 1. Moscow State Institute of Radioenginering, Electronics and Automation, Moscow , Russia ; 2. South Scientific Center of Russian Academy of Science , Rostov-on-Don , Russia |
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15.10 |
O1-25 |
Magnetoplasmonic effects in two-dimensional photonic crystals. A.G. Zhdanov 1 , T.V. Dolgova 1 , A.A. Fedyanin 1 , A.V. Baryshev 2 , A.B. Khanikaev 2 , H. Uchida 2 , and M. Inoue 2 . 1. Dept. of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia 2. Dept. of Electrical and Electronic Eng. , Toyohashi University of Technology , Toyohashi , Japan |
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15.30 |
O1-26 |
Application of Ge- Si Nanostructures in Photovoltaic. O.P. Pchelyakov. Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia |
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15.50 |
O1-27 |
Red Channel Frequency-Contrast Characteristics Correction Method of the Matrix Photoreceiver Based on Simplified Design of the Photocells with Deep Color Separation. I.V. Vanyushin 2 , A.V. Verhovtseva 2 , A.V. Gergel' 1 , N.M. Gorshkova 1 , V.A. Zimoglyad 2 , Yu.I. Tishin 2 . 1. Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia . 2. “Unique IC`s”, LLC, Moscow, Russia |
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16.10 |
O1-28 |
SILAR Preparation of Charge Selective Contacts for Future Photovoltaics. S. Gavrilov 1 , A. Zheleznyakova 1 , Th. Dittrich 2 , E. Poltoratsky 3 , A. Belogorokhov 4 1. Moscow Institute of Electronic Technology, Moscow , Russia , 2. Hahn-Meitner Institut , Berlin , Germany , 3. State Research Institute of Physical Problems, Moscow , Russia , 4. Institute of Rare Metals, Moscow , Russia |
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16.30 - 17.00 |
Coffee break. Winter garden |
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Conference
Hall
Session 7. Devices and ICs
Session Chairman: Andrey Vasiliev, FSU Enterprise “Pulsar”, Russia
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17.00 |
O1-29 |
Physical Limitations of Reliability of Solid-State Microwave Elements at Micro- and Nanoelectronics. A. Vasiliev, V. Sinkevitch. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia |
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17.20 |
O1-30 |
Sign magnetosensitivity of dual-collector lateral bipolar magnetotransistor. R.D. T ikhonov. SMC "Technological Centre" MIEE, Moscow - Zelenograd , Russia |
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17.40 |
O1-31 |
High speed integrated switchboards based on connected quantum wells. B. Konoplev 1,2 , E. Ryndin 2 . 1. Taganrog Institute of Technology - Southern Federal University , Taganrog , Russia . 2. Southern Scientific Center of Russian Academy of Sciences , Rostov-on-Don , Russia |
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18.00 |
O1-32 |
Self-heating influence on device interconnect temperature in high-voltage SOI MOSFET. À . Krasukov, E. Artamonova. Moscow State Insitute of Electronic Engineering, Moscow , Russia |
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18.20 |
O1-33 |
Microwave GaN Transistors: Achievements and Prospects. A. Vasiliev, A. Dorofeev, Yu. Kolkovsky, V. Minnebaev. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia |
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18.40 |
O1-34 |
Nanoionic supercapacitors for 0.5 V nanoelectronics. A.L. Despotuli, A.V. Andreeva, V.V. Aristov. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia |
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Auditorium A
Session 8. Thin Films
Session Chairman: Mikhail Baklanov, IMEC, Leuven , Belgium |
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17.00 |
O1-35 |
Electric Pulse Induced Resistance Change in Oxide Thin Film Heterostructures. A. Ignatiev, N.J. Wu , X. Chen, C. Papagianni, Y. B. Nian, J. Strozier. Texas Center for Advanced Materials, University of Houston , Houston , USA |
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17.20 |
O1-36 |
MBE growth of Ge-Si strained structures with the step buffer for two-dimensional electron gas. L.V. Sokolov, Yu.B. Bolkhovitianov, and A.S. Derjabin. Institute of Semiconductor Physics, SB RAS, Novosibirsk, Russia |
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17.40 |
O1-37 |
Development of MBE technology of III-V semiconductor heterostructures for ultra-high frequency devices. K. Zhuravlev, A. Toropov, V. Mansurov. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia |
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18.00 |
O1-38 |
Surprising phase transformation of a-Si:H films under femtosecond laser impact. V.A. Volodin 1,2 , M.D. Efremov 1 , G.A. Kachurin 1 , S.A. Kochubei 1 , A.G. Cherkov 1 , M. Deutschmann 3 , N. Baersch 3 . 1 . Institute of Semiconductor P hysics SB RAS , Novosibirsk , Russi a . 2 . Novosibirsk State University , Novosibirsk , Russia . 3. Laser Zentrum Hannover, Hannover, Germany |
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18.20 |
O1-39 |
Deposition of ultrathin magnetic films by magnetron sputtering with RF bias on substrate. V.V. Naumov, V.F. Bochkarev, Ed.Yu. Buchin. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia |
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18.40 |
O1-40 |
Emitting prop er ties of cobalt thin films reduced from oxide by proton irradiation. B. Gurovich, K. Prikhodko , A. Domantovsky, K. Maslakov. Russian Research Center "Kurchatov Institute", Moscow , Russia |
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Auditorium B
Session 9. Superconducting Structures
Session Chairman: Mikhail Kupriyanov, Institute of Nuclear Physics , Moscow State University , Russia |
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17.00 |
O1-41 |
Josephson effect in laterally inhomogeneous structures with ferromagnetic materials. T. Karminskaya 1 , M. Kupriyanov 1 , N.Pugach 2 . Institute of Nuclear Physics , Moscow State University , Moscow , Russia . 2. Physics Department of Moscow State University , Moscow , Russia |
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17.20 |
O1-42 |
Ferromagnetic nanodots as source of magnetic field: control transport properties of Josephson junctions and diluted magnetic semiconductor. S.N. Vdovichev. Institute for Physics of Microstructures, RAS, Nizhniy Novgorod , Russia |
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17.40 |
O1-43 |
High Linearity Josephson Array Structures. V.K. Kornev 1 , I.I. Soloviev 1 , N.V. Klenov 1 , and O. A. Mukhanov 2 . 1. Department of Physics, M.V. Moscow State University , Moscow , Russia . 2. HYPRES, Inc., Elmsford , NY , USA |
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18.00 |
O1-44 |
Full synchronization of arrays of high-Tc Josephson junctions. A.M. Klushin 1,2 , M. He 1,3 , M.Yu. Levitchev 2 , V.A. Markelov 2 , V.V. Kurin 2 and N. Klein 1 . 1. Institute for Bio- and Nanosystems and CNI-Centre of Nanoelectronic Systems for Information Technology Forschungszentrum Julich GmbH, Julich , Germany . 2. Institure for physics of microstructures, RAS, Nizhny Novgorod, Russia . 3 Dept. of Electronics, Nankai Univ. , Tianjin , P. R. China |
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18.20 |
O1-45 |
Fluctuations of the thin diffusive metal film under the influence of microwave radiation. I. Devyatov, M. Kupriyanov, D. Goncharov. Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow , Russia |
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18.40 |
O1-46 |
Out-of-plane tilted Josephson junctions of bi-epitaxial YBa 2 Cu 3 O x thin films. J.E. Mozhaeva 1 , P.B. Mozhaev 1 , J. Bindslev Hansen 2 , C.S. Jacobsen 2 , I.K. Bdikin 3 ,
I.M. Kotelyanskii 4 , V.A. Luzanov 4 , S.G. Zybtsev 4 . 1. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia . 2. Department of Physics, Technical University of Denmark , Lyngby , Denmark . 3. CICECO, University of Aveiro , Aveiro , Portugal . 4. Institute of Radio Engineering
and Electronics, Russian Academy of Sciences , Moscow , Russia |
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19.00 |
Dinner |
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Wednesday, October 3rd 2007 |
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8.15 |
Breakfast |
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8.50 |
Welcome remarks
K.A. Valiev. Institute of Physics and Technology, Russian Academy of Sciences.
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Conference
Hall
Plenary Session of SYMPOSIUM QI-2007
Chairman: Y. Ozhigov |
|
9.00 |
Q-01 |
Coulomb blockade of anyons in quantum antidots. D.V.Averin. Department of Physics and Astronomy, Stony Brook University, SUNY, Stony Brook, NY, USA |
|
9.30 |
Q-02 |
Reversible logic circuits
as prototypes of prospective quantum computers, V. Semenov, J. Ren and D. Averin, Stony Brook University, Department of Physics and Astronomy, Stony Brook, NY |
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10.00 |
Q-03 |
Single-qubit operations in the double-donor structure driven by optical and voltage pulses . A. V. Tsukanov . Institute of Physics and Technology, Russian Academy of Sciences |
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10.30 |
Coffee break |
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Conference
Hall
Session 10. Nanodevices and Nanostructures II
Session Chairman: Alex Ignatiev, Texas Center for Advanced Materials, University of Houston , USA
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10.50 |
L2-01 |
INVITED: New Trends in Development of Modern Silicon Nanoelectronics. I.G. Neizvestny. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia |
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11.10 |
O2-01 |
SiGe heterostructures on insulator for CMOS transistors formed by interface mediated endotaxy. V.P. Popov 1 , I.E. Tyschenko 1 , A.G. Cherkov 1 , A.E. Klimov 1 , M. Volskow 2 . 1. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 2 . Institute of Ion Beam Physics and Material Research, Dresden , Germany |
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11.30 |
O2-02 |
Interacting resonances and electron density redistribution in resonant- tunneling heterostructures. A. A. Gorbatsevich 1 , V. V. Kapaev 2 , M. N. Zhuravlev 1 . 1. Moscow State Institute of Electronic Technology ( Technical University ), Moscow , Russia . 2. P.N. Lebedev Physical Institute, Moscow , Russia |
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11.50 |
O2-03 |
Memory Effect in Dielectrics with Inc orporated Nanosize Clusters. A.E. Berdnikov, A.A. Popov, A.A. Mironenko, V.D. Chernomordick. Institute of Physics &Technology RAS, Yaroslavl Branch , Russia |
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12.10 |
O2-04 |
Work function engineering of Ni-Si metal gates on HfO 2 high-? gate dielectrics as probed with in-situ XPS. A.V. Zenkevich, Yu.Yu. Lebedinskii, Yu.A. Matveev and V.N. Nevolin. Moscow Engineering Physics Institute (state university), Russia |
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12.30 |
O2-05 |
Using heterostructures for nanoscaled electronic devices in Novosibirsk Institute of Semiconductor Physics. V.P. Popov, I.E. Tyschenko, A.V. Latyshev, V.A. Gaisler, I.G. Neizvestny, A.L. Aseev. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia |
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Auditorium A
SYMPOSIUM QI-2007
Chairman: A. Tsukanov |
|
11.00 |
Q-04 |
Non-demolishing measurements of an electron spin state via Fano resonance . L. Gorelik 1 , V. Vyurkov 2 , and A. Orlikovsky 2 1. Chalmers University of Technology and Goteborg University, Goteborg, Sweden, 2. Institute of Physics and Technology, RAS, Moscow, Russia |
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11.20 |
Q-05 |
Relative coordinates of coherent electron pair. C. Usenko 1 , N. Cherkashyna 1 . National Taras Shevchenko University of Kyiv, Kyiv, Ukraine |
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11.40 |
Q-06 |
The Software for Quantum Mechanical Calculation of Electronic Structure of Molecules. A.G. Gasanov 1 , F.G. Pashaev 1 . 1. Baku State University, Baku, Azerbaijan |
|
12.00 |
Q-07 |
Josephson-junction qubits . N.V. Klenov, V.K. Kornev, N. G. Pugach, T.S. Rumyantseva. Department of Physics, Moscow State University, Moscow, Russia |
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12.20 |
Q-08 |
Simulation of Quantum Algorithms with high-level language. Mathematica. P.Nyman . International Center for mathematical Modeling in physics, Engineering and Cognitive science, MSI, Vaxjo University, Sweden |
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12.40 |
Q-09 |
Geometric information in eight dimensions vs. quantum information. V.I. Tarkhanov 1 , M.M. Nesterov 2 . 1. St. Petersburg State Polytechnic University, St. Petersburg, Russia. 2. St. Petersburg Institute for Informatics and Automation, Russian Academy of Sciences, St. Petersburg, Russia |
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Auditorium B
Session 11. Magnetic Micro- and Nanostructures
Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS, Russia |
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11.00 |
O2-06 |
Non-equilibrium magnetism of nanoparticles revealed in ‘static' and radiofrequency measurements. M.A. Chuev, N.P. Aksenova, P.G. Medvedev. Institute of Physics and Technology, RAS, Moscow , Russia |
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11.20 |
O2-07 |
Peculiarities of the extraordinary Hall effect for planar arrays Fe nanoparticles embedded in an ultrathin Pt film. V.T. Volkov, V. I. Levashov, V. N. Matveev and V. A. Berezin. Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia |
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11.40 |
O2-08 |
Inhomogeneously magnetization of magnonic ferrite film measurement using magnetooptical Kerr effect. A. Klimov, S. Nikitov. Institute of Radio Engineering and Electronics, Russian Academy of Sciences , Moscow , Russia |
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12.00 |
O2-09 |
Finite size effects in antiferromagnetic multilayers. V.V. Kostyuchenko 1 , M.V. Kostyuchenko 2 . 1. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia 2. Yaroslavl State Technical University , Yaroslavl , Russia |
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12.20 |
O2-10 |
Magnetoresistance of ferromagnetic nanoconstrictions in planar configuration. A.A. Bukharaev 1,2 , R.G. Gatiyatov 1 , P.A. Borodin 1 . 1. Zavoisky Physical Technical Institute, Russian Academy of Sciences , Kazan , Russia . 2. Kazan State University , Kazan , Russia |
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12.40 |
O2-11 |
Spin-flop effect in antiferromagnets induced by the spin-polarised current. H. Gomonay, V. Loktev. National Technical University "KPI", Kyiv, Ukraine |
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13.00 |
Lunch |
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Conference
Hall
Session 12. Plasma Physics and Technologies I
Session Chairman: Dorel Toma, Tokyo Electron U.S. Holding
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14.00 |
L2-02 |
INVITED: Dual (multi-) frequency capacitive coupled plasma (DF CCP) as an effective tool for nanotechnology. A.T. Rakhimov. Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University (SINP MSU), Moscow , Russia |
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14.30 |
O2-12 |
A plasma etch process for bulk finFET manufacturing. D. Shamiryan, A. Redolfi, W. Boullart. IMEC, Leuven , Belgium |
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14.50 |
O2-13 |
Nanoscale etching processes. A. Rubin, C. Welch. Oxford Instruments Plasma Technology, Bristol , UK |
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15.10 |
O2-14 |
Plasma parameters and active particles kinetics in Cl 2 and HCl dc glow discharges. A. Efremov , V. Svettsov. Ivanovo State University of Chemistry & Technology, Ivanovo , Russia |
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15.30 |
O2-15 |
Theoretical study of ionization processes in BF 3 plasmas. V.P. Kudrya. Institute of Physics and Technology, RAS, Moscow , Russia |
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15.50 |
O2-16 |
Investigation of plasma uniformity in processing chambers of plasma tools for microelectronics by computer-aided tomography. K. Rudenko , A. Fadeev, S. Averkin, M. Rudenko, I. Tyurin, A. Rylov, and A. Orlikovsky. Institute of Physics and Technology, RAS, Moscow , Russia |
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Auditorium A
SYMPOSIUM QI-2007
Chairman: Y.Bogdanov |
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14.00 |
Q-10 |
Diffusion approximation of quantum dynamics. Y.I. Ozhigov . Moscow State University, Moscow, Russia |
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14.30 |
Q-11 |
Numerical computations of molecular stationary states. B.K. Novosadov . Moscow State University |
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14.50 |
Q-12 |
What Fundamentally New Properties Are Introduced by Special Relativity to Quantum Cryptography , D.Pomozov, S.Molotkov , Institute of physics and technology RAS |
|
15.10 |
Q-13 |
EPR - experiments: analysis of Bell inequalities violation A. Kraklauer, New York, USA |
|
15.30 |
Q-14 |
An investigation of the antiferromagnet-based NMR quantum register in inhomogeneous magnetic field , A. Kokin. Institute of Physics and Technology, RAS |
|
15.50 |
Q-15 |
Will be announced later |
|
Auditorium B
Session 13. Simulation and Modeling II
Session Chairman: Tariel Makhviladze, Institute of Physics &Technology RAS, Russia |
|
14.00 |
O2-17 |
Physically based simulation of fully depleted SOI MOS transistors at nanometer gate lengths . A. Burenkov, C. Kampen, J. Lorenz, and H. Ryssel. Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen , Germany |
|
14.20 |
O2-18 |
All-quantum simulation of an ultra-small SOI MOSFET. V. Vyurkov 1 , I. Semenikhin 1 , V. Lukichev 1 , A. Burenkov 2 , and A. Orlikovsky 1 . 1. Institute of Physics and Technology, RAS, Moscow , Russia . 2. Fraunhofer Institute of Integrated Systems and Device Technology, Erlangen , Germany |
|
14.40 |
O2-19 |
Modeling of non-stationary electron transport in semiconductor nanowires and carbon nanotubes. D.V. Pozdnyakov, A.V. Borzdov, V.M. Borzdov, F.F. Komarov. Belarus State University , Minsk , Belarus |
|
15.00 |
O2-20 |
Simulation of metal and semiconductor single-electron 1D and 2D arrays. I.I. Abramov, A.L. Baranoff, A.M. Lavrinovich. Belarusian State University of Informatics and Radioelectronics, Minsk , Belarus |
|
15.20 |
O2-21 |
Mathematical modeling of a GaAs integrated microwave limiter. G.Z. Garber. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia |
|
15.40 |
O2-22 |
A Comparison of Fitness Function Schedules for Multi-Objective Univariate Marginal Distribution Optimization of Mixed Analog-Digital Signal Circuits. L. Zinchenko , M. Radecker , F. Bisogno. Fraunhofer IAIS, Sankt Augustin, Germany |
|
16.10 |
Coffee break |
|
16.30 Entresol
POSTER SESSION
I |
|
Bottom
hall.
Exhibition |
|
19.00 |
Dinner |
|
Thursday, October 4th 2007 |
|
8.15 |
Breakfast |
|
Conference
Hall
Session 14. Nanostructures Technologies I
Session Chairman: Anatoly Dvurechenskii, Institute of Semiconductor Physics SB RAS, Russia
|
|
9.00 |
L3-01 |
INVITED: Silicon based quantum dot nanostructures: Physics and Technology. A.V. Dvurechenskii. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia |
|
9.30 |
O3-01 |
Method of creation of monomolecular transistor with “overhanging” electrodes. I.V. Sapkov, E.S. Soldatov. Department of Physics, M.V. Lomonosov Moscow State University , Russia |
|
9.50 |
O3-02 |
Nanocrystal floating gate produced by CVD and thermal processing. A.G. Novikau 1 , P.I. Gaiduk 1 , E.N. Pshenichnij 2 , O.Yu. Nalivajko 2 , V.S. Malishev 2 and V.I. Plebanovich 2 . 1 . Belarusian State University , Minsk , Belarus , 2 . RPC Integral, Minsk , Belarus |
|
10.10 |
O3-03 |
The electroformed open sandwich-structures as elements for crossbar-nanoelectronics. V. Mordvintsev, S. Kudryavtsev V. Levin . Institute of Microelectronics and Informatics, Russian Academy of Sciences , Yaroslavl , Russia |
|
10.30 |
O3-04 |
Nanotechnology for fabricating full-epitaxial Nb-MgO-Nb tunnel junctions of sub-micron sizes. A. Chernych, G. Mikhailov, V. Vinnichenko. Institute of Microelectronics Technology & High Purity Materials, Russian Academy of Sciences , Chernogolovka, Moscow Region , Russia |
|
Auditorium A
SYMPOSIUM QI-2007
Chairman: B. Novosadov |
|
9.00 |
Q-16 |
Quantum computation and hidden variables. V.V. Aristov and A.V. Nikulov, Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia |
|
9.20 |
Q-17 |
Generation of entangled states in quasi-periodical ferroelectrics, S. Kulik. Moscow State University, Moscow, Russia |
|
9.40 |
Q-18 |
Limitations on ion trap quantum computing scheme . A. Burkov. Moscow State University, Moscow, Russia |
|
10.00 |
Q-19 |
Has it been proved that a superconducting loop could be flux qubit? A.A. Burlakov, V.L. Gurtovoi, A.V. Nikulov and V.A. Tulin. Institute of Microelectronics Technology, Russian Academy of Sciences, Chernogolovka, Moscow region, Russia |
|
10.20 |
Q-20 |
Thermal entanglement in a case of two spin temperatures , M. Kutcherov Polytechnic Institute of Siberian Federal University |
|
10.40 |
Q-21 |
Will be announced later |
|
Auditorium B
Session 15. Simulation and Modeling III
Session Chairman: Igor Abramov, Belarusian State University of Informatics and Radioelectronics , Belarus |
|
9.00 |
L3-02 |
INVITED: Focused ion beam source of a new type for micro- and nanoelectronics technologies. V.L. Varentsov. V.G.Khlopin Radium Institute, St. Petersburg , Russia |
|
9.30 |
O3-05 |
New Approach in the Development of Low Noise Microwave Semiconductor Devices. N.V. Alkeev 1 , S.V. Averin 1 , V.E. Lyubchenko 1 , A.A. Dorofeev 2 . 1. Institute of Radioengineering & Electronics, RAS , Fryazino, Moscow region, Russia . 2. Federal State Unitary Enterprise “Scientific & Product Enterprise “Pulsar”, Moscow , Russia |
|
9.50 |
O3-06 |
Two-band models of wave function formalism f î r resonant tunneling diodes. I.I. Abramov, I.A. Goncharenko, N.V. Kolomejtseva, A.A. Shilov. Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus |
|
10.10 |
O3-07 |
The prediction of nanostructure properties on the base of porous silicon. D. Bilenko, O. Belobrovaya, E. Jarkova, E. Khasina, I. Mysenko, D. Terin. Saratov State University , Saratov , Russia |
|
10.30 |
O3-08 |
Simulation of feature profile evolution during the cyclic etching/ passivation process of deep plasma Si etching by the cell-string hybrid method. A.S. Shumilov, I.I. Amirov. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia |
|
11.00 |
Coffee break |
|
Conference
Hall
Session 16. Nanostructures Technologies II
Session Chairman: Vitalii Aristov, Institute of Microelectronics Technology RAS, Russia
|
|
11.30 |
O3-09 |
Influence of growth temperature and double-side doping on structural and electro-physical characteristics of the Al x Ga 1-x As/In y Ga 1-x As/GaAs nanosystem. I.A. Subbotin * , G.B. Galiev ** , R.M. Imamov * , M.A. Chuev *** . * Shubnikov Institute of Crystallography, RAS, Moscow , Russia . ** Institute of Ultra-High-Frequency Semiconductor Electronics, RAS, Moscow , Russia . *** Institute of Physics and Technology, RAS, Moscow , Russia |
|
11.50 |
O3-10 |
Model of diffusion limited aggregation for the effect of magnetic field on ion beam synthesis. G.G. Gumarov, V. Yu. Petukhov. Kazan Physical Technical Institute of Kazan Scientific Center, RAS, Kazan , Russia |
|
12.10 |
O3-11 |
Heterogeneous melting and participation of it in different micro- and nanotechnology processes. A.A. Buzdugan, S.A. Gavrilov, D.G. Gromov, E.N. Redichev, I.S. Chulkov. Moscow Institute of Electronic Technology, Zelenograd , Russia |
|
12.30 |
O3-12 |
Porous silicon the material for nano- and microstructurizations. V. Starkov. Institute of Microelectronics Tecnology, RAS, Chernogolovka , Russia |
|
12.50 |
O3-13 |
The approach to formation of interconnections with the low dimension for damascene technology. D.G. Gromov a , E.N .Redichev a , A.A. Golishnikov b , A.A. Buzdugan a , I.S. Chulkov a , R.M. Ammosov c . a Moscow Institute of Electronic Technology ( Technical University ), Moscow , Zelenograd , Russia . b ”Technological Center” Research and Production Complex at MIET, Moscow , Zelenograd , Russia . c State Research Institute of Physical Problems, Moscow, Zelenograd, Russia |
|
Auditorium A
SYMPOSIUM QI-2007
Chairman: A. Burkov |
|
11.30 |
Q-22 |
Explicit Attack on the Key in Quantum Cryptography) Reaching the Theoretical Error Limit 11%, A.Timofeev, S.Molotkov, Moscow State University |
|
11.50 |
Q-23 |
Hidden variables in Bell model and dynamical chaos, Y.Bogdanov , Institute of physics and technology, Moscow, Russia |
|
12.10 |
Q-24 |
New Time-Phase Coding Method in Quantum Cryptography , A.Makkaveev, S.P.Kulik , S.Molotkov , Institute of physics and technology |
|
12.30 |
Q-25 |
3D-vortex labyrinth trapping in the near field of a solid-state microchip laser. A.Yu. Okulov . P.N.Lebedev Physical Institute of Russian Academy of Sciences Leninsky prospect 53, 119991 Moscow, Russia |
|
12.50 |
Q-26 |
Hidden time hypothesis and “no - protocol theorem”. P.V. Kurakin. Moscow Institute of Physics and Technology, Moscow, Russia |
|
Auditorium B
Session 17. Micro- and Nanostructures Characterization I
Session Chairman: Mikhail Chuev, Institute of Physics &Technology RAS, Russia |
|
11.30 |
O3-14 |
Nanorelief elements in reference measures for scanning electron microscopy. S.A. Darznek 1 , M.N. Filippov 2 , V.B. Mityukhlyaev 1 , Yu.A. Novikov 3 , Yu.V. Ozerin 4 , A.V. Rakov 3 , P.A. Todua 1 . 1. Center for Surface and Vacuum Research, Moscow , Russia . 2. N.S. Kurnakov General and Inorganic Chemistry Institute, RAS , Moscow , Russia . 3. A.M. Prokhorov General Physics Institute, RAS , Moscow , Russia . 4. Mikron Corporation, Moscow , Russia |
|
11.50 |
O3-15 |
Direct measurement of the linewidth of relief element on AFM in nanometer range. S.A. Darznek 1 , M.N. Filippov 2 , I.D. Lysov 1 , Yu.A. Novikov 3 , A.V. Rakov 3 , V.A. Sharonov 1 , P.A. Todua 1 . 1. Center for Surface and Vacuum Research, Moscow , Russia . 2. N.S. Kurnakov General and Inorganic Chemistry Institute, RAS , Moscow , Russia . 3. A.M. Prokhorov General Physics Institute, RAS , Moscow , Russia |
|
12.10 |
O3-16 |
Generalized dynamical theory of X-rays diffraction by curved perfect crystals. T. Chen. Moscow State Academy of Fine Chemical Technology, Moscow , Russia |
|
12.30 |
O3-17 |
The special features of Al x Ga 1-x N \ GaN heterostructures. K.L. Enisherlova 1 , R.M. Imamov 2 , I.A. Subbotin 2 , T.F. Rusak 1 , E.M. Temper 1 . 1. Federal state unitary enterprise «Science &Production enterprise «Pulsar», Moscow , Russia 2. Institute of Crystallography RAS, Moscow , Russia |
|
12.50 |
O3-18 |
Characterization of Nanometer Structures for CMOS VLSIC Design Flow. D.Y. Adamov, Y.F. Adamov. LCC “Unique IC`s”, Moscow Russia |
|
13.10 |
O3-19 |
Fundamental and applied aspects of flicker-noise spectroscopy. M. Makoviychuk. Institute of Physics and Technology of the RAS, Yaroslavl Branch, Yaroslavl , Russia |
|
13.30 |
Lunch |
|
Conference
Hall
Session 18. Plasma Physics and Technologies II
Session Chairman: Dorel Toma, Tokyo Electron U.S. Holding
|
|
14.20 |
L3-03 |
INVITED: Plasma etching of high aspect ratio structures: from complex chemistry to Bosh processing. V. Lukichev 1 , V. Yunkin 2 . 1. Institute of Physics and Technology, RAS, Moscow , Russia . 2. Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow region, Russia |
|
14.50 |
O3-20 |
Plasma Si etching processes for microsystem technology. I.I. Amirov1, O.V. Morozov1, M.O. Izuimov1, B.A. Kalnov2, A.A. Orlikovsky2, K.A. Valiev2. 1. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl, Russia. 2. Institute of Physics and Technology, RAS, Moscow, Russia |
|
15.10 |
O3-21 |
Dry processes for formation of suspended Si bulk structures. O. V. Morozov 1 , A.V. Postnikov 1 , I.I. Amirov 1 , V.A. Kalnov 2 . 1. Institute of Physics and Technology RAS, Yaroslavl Branch, Yaroslavl , Russia . 2.Institute of Physics and Technology RAS, Moscow , Russia . |
|
15.30 |
O3-22 |
Reactive sputtering of metal targets: influence of reactive atoms implantation. V.A. Marchenko. Institute of Microelectronics Technology, RAS, Chernogolovka , Russia |
|
15.50 |
O3-23 |
Investigation of impurity composition of atomic hydrogen beam formed by a low-pressure arc-discharge source. V.A. Kagadei , D.I. Proskurovski, and S.V. Romanenko. High Current Electronics Institute, SB RAS, Tomsk , Russia |
|
16.10 |
O3-24 |
Langmuir-Probe applications in monitoring of plasma etching. A.V. Miakonkikh , K.V. Rudenko and A.A. Orlikovsky. Institute of Physics and Technology, Russian Academy of Sciences , Moscow , Russia |
|
Auditorium A
SYMPOSIUM QI-2007 |
|
14.20 |
Q-27 |
Problem of detection of Rydberg atoms and quantum information processing, I.Riabtsev, D.Tretiakov, I.Beterov, V.Entin, Institute semiconductor physics, Siberian Dep.RAS |
|
14.40 |
Q-28 |
Quantum registers on the basis of inhomogeneous chains of nuclear spins, E. B. Fel'dman, Institute of Problems of Chemical Physics of RAS |
|
15.00 |
Q-29 |
Thermal pairwise entanglement in an inhomogeneous magnetic field , E. B. Fel'dman, A. N. Pyrkov, Institute of Problems of Chemical Physics of RAS, 142432, Chernogolovka, Moscow |
|
15.20 |
Q-30 |
Single molecule implantation as alternative of single atom (ion) implantation for Quantum Computer development , V. Zhukov, V. Maslov, Inst. of informatics nd automation, RAS |
|
15.40 |
Q-31 |
Prequantum model with classical fields as hidden variables. A. Khrennikov. Univ. Vaxjo, Sweden |
|
16.00 |
Q-32 |
Fair Sampling and Rotational Invariance in EPR experiments, G. Adenier, A. Khrennikov, Vaxjo University |
|
16.20 |
Q-33 |
Will be announced later |
|
Auditorium B
Session 19. Micro- and Nanostructures Characterization II
Session Chairman: Akira Toriumi, University of Tokyo , Japan |
|
14.20 |
O3-25 |
Photolumenescence from the nanosized Si fabricated by modified PVD process. A.F. Alexandrov 1 , S-K. Koh 2 , E.A. Kralkina 1 , J.H. Lee 2 , N.E. Maslova 1 , V.B. Pavlov 1 , V.P. Savinov 1 , V.Yu. Timoshenko 1 , K.V. Vavilin 1 . 1. Physical faculty of M.V. Lomonosov Moscow State University, Moscow Russia . 2. P&I Corporation, Seoul , S.Korea |
|
14.40 |
O3-26 |
Luminescence of the intrinsic and extrinsic defects in hafnia films . A.A Rastorguev 1 , V.I. Belyi 1 , T.P. Smirnova, L.V. Yakovkina 1 , V.A. Gritsenko 2 , M.V. Zamorynskaya 3 , H. Wong 4 . 1. Nikolaev Institute of Inorganic Chemistry, SB RAS, Novosibirsk , Russia . 2. Institute of Semiconductor Physics, SB RAS, Novosibirsk , Russia . 3. Ioffe Physicotechnical Institute, RAS, St. Petersburg , Russia . 4. Electronic Engineering Department, City University of Hong Kong |
|
15.00 |
O3-27 |
Chemical Vapor Deposition and characterization of HfO 2 /Si composition. T.P. Smirnova 1 , F.A. Kuznetsov 1 , V.V. Kaichev 2 , S.A. Beloshapkin 3 , V.I. Kosyakov 1 , L.V. Yakovkina 1 , M.S. Lebedev 1 . 1. Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk , Russia . 2. Boreskov Institute of Catalysis, SB RAS, Novosibirsk , Russia . 3 . Materials and Surface Science Institute, Limerick , Ireland |
|
15.20 |
O3-28 |
Falling down capacitance impedance under light illumination of MDS-structures with three-layer SiN x dielectrics. S.A. Arzhannikova 1, a , M.D. Efremov 1,b , A.A. Voschenkov 1 , V.A. Volodin 1 , G.N. Kamaev 1 , D.V. Marin 1 , V.S. Shevchuk 1 S.A. Kochubei 1 , A.A. Popov 2 , Yu.A. Minakov 2 . 1. Institute of Semiconductor Physics SB RAS, Novosibirsk , Russia 2. Institute of Physics and Technology, RAS, Yaroslavl Branch, Yaroslavl , Russia |
|
15.40 |
O3-29 |
Al x GaN\GaN structure diagnostic by C-V characteristics method. K.L. Enisherlova, I.B. Gulyaev, V.G. Goryachev, A.U. Dorofeev, E.M. Temper, N.B. Gladisheva. Federal state unitary enterprise «Science &Production enterprise «Pulsar», Moscow , Russia |
|
16.00 |
O3-30 |
CVD Diamond with Electron Conductivity. The New Data on f.c.c. Carbon. M . B . Guseva , V . G . Babaev , V . V . Khvostov , I . Yu . Koniashin , Yu . A . Korobov , N . D . Novikov . Department of Physics, M.V. Lomonosov Moscow State University , Moscow , Russia |
|
16.20 |
Coffee break |
|
16.30 Entresol.
POSTER SESSION
II |
|
Bottom
hall.
Exhibition |
|
19.30 |
Banquet |
|
Friday, October 5th , 2007 |
|
9.00 |
Breakfast |
|
10.00 |
Departure |
|
|
