Chairs: E. Velikhov, National Research Center “Kurchatov Institute”, Moscow, Russia
            Yu. Gulyaev, Kotel'nikov Institute of Radio Engineering and Electronics, Moscow, Russia
Co-chair: G. Krasnikov, JSC Molecular Electronics Research Institute, Zelenograd, Russia
Members:
A. Aseev, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia
D. Averin, Stony Brook University, New York, USA
M. Baklanov, International Microelectronic Center (IMEC), Leuven, Belgium
F. Balestra, Grenoble Institute of Technology, Grenoble, France
V. Labunov, Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
K. Likharev, Stony Brook University, New York, USA
A. Nazarov, Institute of Semiconductor Physics of National Ukrainian Academy of Sciences, Kiev, Ukraine
J. Nishizawa, Semiconductor Research Institute, Sendai, Japan
K. Novoselov, University of Manchester, Manchester, UK
T. Otsuji, Tohoku University, Sendai, Japan
I. Rangelow, University of Ilmenau, Ilmenau, Germany
S. Schulz, Fraunhofer Institute for Electronic Nanosystems, Chemnitz, Germany
Th. Skotnicki, ST Microelectronics, Crolles, France
R. Suris, Ioffe Institute, St. Peterburg, Russia
A. Toriumi, University of Tokyo, Tokyo, Japan

Program Committee

Chair: Yu. Gulyaev, Kotel'nikov Institute of Radio Engineering and Electronics, Moscow, Russia
Co-chair: I. Neizvestnyi, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia
Co-chair: V. Lukichev, Institute of Physics and Technology, Moscow, Russia
Members:
V. Betelin, Scientific Research Institute of System Analysis, Moscow, Russia
Yu. Bogdanov, Institute of Physics and Technology, Moscow, Russia
Yu. Chaplygin, National Research University of Electronic Technology, Zelenograd, Russia
M. Chuev, Institute of Physics and Technology, Moscow, Russia
L. Fedichkin, Moscow Institute of Physics and Technology (TU), Moscow, Russia
F. Komarov, Belarusian State University, Minsk, Belarus
P. Kop’ev, Ioffe Institute, St. Peterburg, Russia
P. Maltsev, UHF Semiconductor Microelectronics Institute, Moscow, Russia
V. Panchenko, Institute of Laser and Information Technologies, Shatura, Russia
D. Roshchupkin. Institute of Microelectronics Technology and High-Pure Materials, Chernogolovka, Russia
K. Rudenko, Institute of Physics and Technology, Moscow, Russia
A. Rudy, Yaroslavl Demidov State University, Yaroslavl, Russia
N. Salaschenko, Institute of Microstructures Physics, Nizhnii Novgorod, Russia
K. Salikhov, Zavoiskiy Physical-Technical Institute, Kasan, Russia
A. Sigov, Moscow State Institute of Radioengineering, Electronics, and Automation (TU), Moscow, Russia
P. Todua, Moscow Institute of Physics and Technology (TU), Moscow, Russia
V. Vyurkov, Institute of Physics and Technology, Moscow, Russia

Organizing Committee

Chair: V. Lukichev, Institute of Physics and Technology, Moscow, Russia
Co-chair: K. Rudenko, Institute of Physics and Technology, Moscow, Russia
Members:
I. Abramov, Belarusian State University of Informatics and Radioelectronics, Minsk, Belarus
I. Amirov, Yaroslavl Branch of the Institute of Physics and Technology, Yaroslavl, Russia
Yu. Bogdanov, Institute of Physics and Technology, Moscow, Russia
A. Buharaev, Zavoiskiy Physical-Technical Institute, Kasan, Russia
M. Chuev, Institute of Physics and Technology, Moscow, Russia
A. Gorbazevitch, P.N. Lebedev Physical Institute, Moscow, Russia
Eu. Gornev, JSC Molecular Electronics Research Institute, Zelenograd, Russia
M. Korolev, National Research University of Electronic Technology, Zelenograd, Russia
O. Pchelyakov, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia
V. Popov, Rzhanov Institute of Semiconductor Physics, Novosibirsk, Russia
V. Rubaev, NIX Company, Moscow, Russia

Local Organizing Committee